1 transistor 2sc3811 silicon npn epitaxial planer type for high speed switching n features l high-speed switching. l low collector to emitter saturation voltage v ce(sat) . n absolute maximum ratings (ta=25?c) unit: mm parameter collector to base voltage collector to emitter voltage emitter to base voltage peak collector current collector current collector power dissipation junction temperature storage temperature 1:emitter 2:base 3:collector jedec:toC92 eiaj:scC43a 5.0 0.2 4.0 0.2 5.1 0.2 13.5 0.5 0.45 +0.2 ?.1 0.45 +0.2 ?.1 1.27 1.27 2.3 0.2 2.54 0.15 2 13 symbol v cbo v ces v ebo i cp i c p c t j t stg ratings 40 40 5 300 100 400 150 C55 ~ +150 unit v v v ma ma mw ?c ?c n electrical characteristics (ta=25?c) parameter collector cutoff current emitter cutoff current forward current transfer ratio collector to emitter saturation voltage base to emitter saturation voltage transition frequency collector output capacitance turn-on time turn-off time storage time symbol i cbo i ebo h fe * v ce(sat) v be(sat) f t c ob t on t off t stg conditions v cb = 40v, i e = 0 v eb = 4v, i c = 0 v ce = 1v, i c = 10ma i c = 10ma, i b = 1ma i c = 10ma, i b = 1ma v cb = 10v, i e = C10ma, f = 200mhz v cb = 10v, i e = 0, f = 1mhz refer to the measurment circuit min 60 typ 0.17 450 2 17 17 10 max 0.1 0.1 200 0.25 1.0 6 unit m a m a v v mhz pf ns ns ns * h fe rank classification rank q r h fe 60 ~ 120 90 ~ 200
2 transistor 2sc3811 p c ta i c v ce v ce(sat) i c v be(sat) i c h fe i c f t i e c ob v cb 0 160 40 120 80 140 20 100 60 0 800 600 200 500 700 400 100 300 ambient temperature ta ( ?c ) collector power dissipation p c ( mw ) 01.2 1.0 0.8 0.2 0.6 0.4 0 120 100 80 60 40 20 ta=25?c 2.5ma 2.0ma 1.5ma 1.0ma 0.5ma i b =3.0ma collector to emitter voltage v ce ( v ) collector current i c ( ma ) 0.1 1 10 100 0.3 3 30 0.01 0.03 0.1 0.3 1 3 10 30 100 i c /i b =10 ta=75?c 25?c ?5?c collector current i c ( ma ) collector to emitter saturation voltage v ce(sat) ( v ) 1 10 100 1000 3 30 300 0.01 0.03 0.1 0.3 1 3 10 30 100 i c /i b =10 ta=?5?c 75?c 25?c collector current i c ( ma ) base to emitter saturation voltage v be(sat) ( v ) 0.1 1 10 100 0.3 3 30 0 600 500 400 300 200 100 v ce =1v ta=75?c 25?c ?5?c collector current i c ( ma ) forward current transfer ratio h fe ? ?0 ?00 ?000 ? ?0 ?00 0 600 500 400 300 200 100 v cb =10v ta=25?c emitter current i e ( ma ) transition frequency f t ( mhz ) 1 3 10 30 100 0 6 5 4 3 2 1 i e =0 f=1mhz ta=25?c collector to base voltage v cb ( v ) collector output capacitance c ob ( pf ) switching time measurement circuit t on , t off test circuit t stg test circuit 220 w 3.3k w 0.1 m f 3.3k w 50 w v cc =3v v out 50 w v in =10v v bb = ?v v in v in v out t on t off v out 10% 10% 90% 90% 0.1 m f 0.1 m f a v out v in =10v v bb =2v 90 w v cc =10v 500 w 50 w 910 w 500 w 1k w 0 v in t stg v out 10% 10% (waveform at a)
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